Referenced Items are not available for this document.
This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the class-E topology for wideband code-division multiple-access (WCDMA) applications. The class-E topology is employed as the carrier and peaking cells of the Doherty configuration. For validations, the proposed DPA is designed and implemented with 25-W GaN HEMTs at 2.14 GHz. For the proposed DPA, the power-added efficiency (PAE) and drain efficiency of 56.1% and 61.2% are achieved at 40 dBm (6-dB backoff power from Psat) for a continuous wave. For a 1-carrier WCDMA signal, the PAE of 44.8% is obtained with an adjacent channel leakage ratio (ACLR) of -31 dBc at 37 dBm, which is an 8.9% improvement over the conventional DPA with an ACLR of -36.4 dBc.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:18
,
Issue:
9
)
Date of Publication: Sept. 2008
- Page(s):
- 608 - 610
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 10208020
- Digital Object Identifier :
- 10.1109/LMWC.2008.2002460
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 12 September 2008
- Issue Date :
- Sept. 2008
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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