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Highly Efficient Doherty Amplifier Based on Class-E Topology for WCDMA Applications

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3 Author(s)
Yong-Sub Lee ; Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang ; Mun-Woo Lee ; Yoon-Ha Jeong

This letter reports a high-efficiency gallium nitride (GaN) high-electron mobility transistor (HEMT) Doherty power amplifier (DPA) based on the class-E topology for wideband code-division multiple-access (WCDMA) applications. The class-E topology is employed as the carrier and peaking cells of the Doherty configuration. For validations, the proposed DPA is designed and implemented with 25-W GaN HEMTs at 2.14 GHz. For the proposed DPA, the power-added efficiency (PAE) and drain efficiency of 56.1% and 61.2% are achieved at 40 dBm (6-dB backoff power from Psat) for a continuous wave. For a 1-carrier WCDMA signal, the PAE of 44.8% is obtained with an adjacent channel leakage ratio (ACLR) of -31 dBc at 37 dBm, which is an 8.9% improvement over the conventional DPA with an ACLR of -36.4 dBc.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 9 )