Referenced Items are not available for this document.
This paper presents a study of the capability of gallium-nitride (GaN) high-electron mobility transistors (HEMTs) to achieve low noise and high linearity performance. A packaged GaN HEMT was measured in a 50 - Omega system at 2 GHz. Noise figures slightly above 1.8 dB were achieved together with a record third-order intercept point of 54 dBm. The same configuration yields a maximum output power of 30 W, with 50% power-added efficiency. This combination of high power and low-noise performance allows the realization of highly linear low-noise amplifiers, which could significantly reduce protection and filter efforts at receiver inputs.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:18
,
Issue:
9
)
Date of Publication: Sept. 2008
- Page(s):
- 605 - 607
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 10221427
- Digital Object Identifier :
- 10.1109/LMWC.2008.2002458
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 12 September 2008
- Issue Date :
- Sept. 2008
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
