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Light Output Enhancement of InGaN Light-Emitting Diodes Grown on Masklessly Etched Sapphire Substrates

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4 Author(s)
Hung-Cheng Lin ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli ; Ruo-Syuan Lin ; Jen-Inn Chyi ; Chia-Ming Lee

A maskless wet-etching method is used to prepare patterned sapphire substrates for enhancing the output power of InGaN light-emitting diodes (LEDs). Blue LEDs grown on the patterned sapphire substrates exhibit an output power of 24.9 mW, which is 19.4% higher than that of the devices grown on flat substrates. The uniformity of the optical and electrical properties of LEDs across a 2-in wafer is slightly improved as well.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 19 )