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Fabrication of 2700-V 12- \hbox {m}\Omega \cdot \hbox {cm}^{2} Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50

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6 Author(s)
Ghandi, R. ; Sch. of Inf. & Commun. Technol., R. Inst. of Technol., Stockholm ; Hyung-Seok Lee ; Domeij, Martin ; Buono, B.
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High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 mOmegaldrcm2) and high common-emitter current gain of 50 have been fabricated. A graded-base doping was implemented to provide a low-resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high-temperature dopant activation annealing and for avoiding generation of lifetime-killing defects that reduce the current gain.

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Electron Device Letters, IEEE  (Volume:29 ,  Issue: 10 )