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Impact of Design on High-Frequency Performance of Advanced MIM Capacitors Using Si _{3} N _{4} Dielectric Layers

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9 Author(s)
Piquet, J. ; LAHC, Univ. de Savoie, Le Bourget du Lac ; Bermond, C. ; Thomas, M. ; Farcy, A.
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High-frequency characterizations of ultra thin 32 nm PECVD Si3N4 dielectric in an advanced metal-insulator-metal (MIM) capacitors are presented, with focus on the impact of design on the performance of MIM capacitors. Frequency dependent capacitance has been extracted over a wide range of frequency bandwidth. An equivalent model circuit of capacitors including four parameters was developed to explain this behavior. The results have been compared with the values obtained from a 3-D electromagnetic modeling. A specific chart has been introduced to predict the electrical performance of new MIM capacitor designs.

Published in:

Components and Packaging Technologies, IEEE Transactions on  (Volume:31 ,  Issue: 3 )

Date of Publication:

Sept. 2008

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