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Improving Electrical Properties of ZnO Thin Films by the Combination of Plasma Treatment, Post-Annealing and Doping

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2 Author(s)
Tsai-Yuan Shie ; Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei ; Ching-Fuh Lin

The effect of Ar plasma and post-annealing on the electrical properties of undoped and Al-doped ZnO films deposited on glass substrates using the sol-gel spin-coating technique are investigated. The surface morphology of ZnO thin films shows that the grain boundaries of ZnO grains become indistinct after plasma treatment. With the appropriate processing sequence, the resistivity of ZnO thin films decreases significantly to the order of 10-3.

Published in:

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Date of Conference:

18-21 Aug. 2008