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In this paper two types of nano transistors: coaxial nanowire and carbon nanotube field effect transistors are presented. The current-voltage transfer characteristics near the source of these nano transistors are achieved by using an approach based on WKB approximation and ballistic transport. The simulated current-voltage characteristics for these nano transistors are compared. It is shown the nanowire FET has a higher Ion/ Ioff ratio rather than carbon nanotube FET. Moreover, it is demonstrated the carbon nanotube FET can provide the higher on current depending on its structure and parameters. The presented comparisons can be used to understand the necessary characteristics of a nano transistor in order to be used in a specific VLSI circuit design or other specific applications.