By Topic

Comparison of Current-Voltage Characteristics of Carbon Nanotube and Nanowire FETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Kargar, A. ; Dept. of Electr. Eng., Shiraz Univ., Shiraz

In this paper two types of nano transistors: coaxial nanowire and carbon nanotube field effect transistors are presented. The current-voltage transfer characteristics near the source of these nano transistors are achieved by using an approach based on WKB approximation and ballistic transport. The simulated current-voltage characteristics for these nano transistors are compared. It is shown the nanowire FET has a higher Ion/ Ioff ratio rather than carbon nanotube FET. Moreover, it is demonstrated the carbon nanotube FET can provide the higher on current depending on its structure and parameters. The presented comparisons can be used to understand the necessary characteristics of a nano transistor in order to be used in a specific VLSI circuit design or other specific applications.

Published in:

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Date of Conference:

18-21 Aug. 2008