By Topic

Infrared Detection Using Carbon Nanotube Field Effect Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hongzhi Chen ; Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI ; Ning Xi ; King Wai-Chiu Lai ; Jiangbo Zhang

Carbon nanotube (CNT) based infrared (IR) detectors have been reported and shown promising properties taking advantage of its one dimensional structure and unique electrical properties. The CNT photodiodes detect IR signal through Schottky barriers that are formed when metal and semiconductor CNT come into contact due to the difference of the energy levels. However, the generated photocurrent was small due to the structure of the CNT photodiodes, consisting of two reversely connected Schottky diodes. In addition, the mechanism of the Schottky barriers of these photodiodes were not well understood. In this paper, a CNT Field Effect Transistor (CNTFET) is designed and used as an IR detector, improving the performance by tuning the doping level of the CNT through the gate.By introducing the gate as in CNTFET to the photodiodes, the Fermi levels of the CNTs are able to be adjusted by the electrostatic doping, as a result the dark currents of CNT photodiodes can be screened. On the other hand, the photocurrent is determined by the capability of Schottky barriers to separated photogenerated electron and hole pairs, thus gate can shift the Fermi level of a CNT to the most sensitive level in order to produce a maximum photocurrent. The test results from the proposed CNTFET IR detectors provided a better understanding of its working principle in order to inspire optimal design of a CNT photodetector. The experimental results showed the photocurrent was proportional to the depletion width of Schottky barriers.

Published in:

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Date of Conference:

18-21 Aug. 2008