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Analyzing N-Curve Metrics for Sub-Threshold 65nm CMOS SRAM

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2 Author(s)
Samson, M. ; Center for VLSI & Embedded Syst. Technol., Int. Inst. of Inf. Technol., Hyderabad ; Srinivas, M.B.

This paper examines the usefulness of N-curve metrics for a 65 nm SRAM cell operating in sub-threshold region. Various N-curve metrics are evaluated with changing power supply voltage, temperature, cell ratios, pull up ratios and oxide thickness. N-curve metrics are also evaluated considering the effect of intra die and inter die random threshold voltage variations. Results indicate that N-curve method provides better metrics in terms of SINM and WTI to assess the stability of SRAM operating in sub-threshold region and enables complete functional analysis.

Published in:

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Date of Conference:

18-21 Aug. 2008

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