Towards fully integrated high temperature wireless sensors using GaN-based HEMT devices

Wireless sensors that are capable of working in extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better monitoring and control. Gallium Nitride (GaN), a widely researched wide bandgap material, can potentially be used to fabricate components for sensing and actuation for high temperature integrated wireless sensors. In this paper we are presenting an experimental study on the performance of AlGaN/GaN HEMT at high temperatures (up to 300°C). From test results, DC and microwave parameters at different temperatures were extracted.