By Topic

Towards fully integrated high temperature wireless sensors using GaN-based HEMT devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Huque, M.A. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN ; Islam, S.K. ; Kuruganti, P.T.

Wireless sensors that are capable of working in extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better monitoring and control. Gallium nitride (GaN), a widely researched wide bandgap material, can potentially be used to fabricate components for sensing and actuation for high temperature integrated wireless sensors. In this paper we are presenting an experimental study on the performance of AlGaN/GaN HEMT at high temperatures (up to 300degC). From test results, DC and microwave parameters at different temperatures were extracted.

Published in:

Circuits and Systems, 2008. MWSCAS 2008. 51st Midwest Symposium on

Date of Conference:

10-13 Aug. 2008