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Design of Low {V}_{\pi} High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure

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4 Author(s)
Qiaoyin Lu ; Sch. of Phys. & Centre for Telecommun. Value-Chain Driven Res., Semicond. Photonics Group, Trinity Coll. Dublin, Dublin ; Weihua Guo ; Diarmuid Byrne ; John F. Donegan

GaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Pade approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V V pi are predicted for a 5-mm-long modulator.

Published in:

IEEE Photonics Technology Letters  (Volume:20 ,  Issue: 21 )