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Modelling of band-to-band tunnelling in silicon-on-insulator transistor with degenerately doped floating body

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3 Author(s)
Kim, K.R. ; Center for Integrated Syst., Stanford Univ., Stanford, CA ; Park, B.-G. ; Dutton, R.W.

Numerical simulations based on a novel band-to-band tunnelling model and DC quasi-stationary method have been performed for a field-induced inter-band tunnelling effect transistor with a degenerately doped floating body and source/drain tunnel junction. Carrier injection through the tunnel junctions into a floating body is responsible for negative-differential conductance as well as negative-differential transconductance. Simulation results for various device structures show that a gate field-effect on the tunnel junctions is a key design factor to improve device characteristics.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 18 )