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Temperature-Dependence of Ge on Si p–i–n Photodetectors

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4 Author(s)
Colace, L. ; Dept. of Electron. Eng., Univ. Roma Tre, Rome ; Balbi, Michele ; Sorianello, V. ; Assanto, G.

We investigate the temperature dependence of germanium on silicon p-i-n photodetectors in terms of both dark current density and near-infrared responsivity. The dark current increases by nearly a factor 1.6 every 10degC, consistently with carrier generation in the space charge region. The responsivity has a complex trend, its temperature variation depending on wavelength and on the germanium quality. Detectors with a large defect density in the active layer exhibit a reduced responsivity as the temperature increases.

Published in:

Lightwave Technology, Journal of  (Volume:26 ,  Issue: 14 )

Date of Publication:

July15, 2008

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