Referenced Items are not available for this document.
This paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel pMOSFETs. Our extracted Coulomb mobility shows very weak stress dependency at room temperature. This finding has also been verified in both long- and short-channel devices by the four-point wafer bending measurement. Therefore, in order to maximize the process-induced strain efficiency on nanoscale pMOSFETs, lower surface impurity concentration is suggested to avoid the Coulomb mobility domination in carrier transport.
Published in:
Nanotechnology, IEEE Transactions on
(Volume:7
,
Issue:
5
)
Date of Publication: Sept. 2008
- Page(s):
- 538 - 543
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 10236796
- Digital Object Identifier :
- 10.1109/TNANO.2008.2004771
- Product Type:
- Journals & Magazines
- Date of Publication :
- 26 August 2008
- Date of Current Version :
- 13 January 2009
- Issue Date :
- Sept. 2008
- Sponsored by :
- IEEE Nanotechnology Council
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