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Edge-view photodetector (EVPD) is a new semiconductor photodetector with 3-D structure for simple optical assembly and packaging. In this paper, the equivalent R-L-C circuit model of EVPD was built and the R-L-C values were obtained by fitting the model S parameters to the measurement. A commercial P-I-N photodetector was also studied with the same approach and the R-L-C values were compared with those of EVPD. As a result, the series resistance, capacitance and inductance of EVPD were much higher than that of the PIN PD. It may be a reason of the poorer frequency properties of EVPD. To improve the EVPD performance, the material growth of I layer, Ohm contact process and anode process were suggested to be optimized in the future work.