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Abrupt Delta-Doped InP/GaInAs/InP DHBTs With 0.45- \mu\hbox {m} -Wide T-Shaped Emitter Contacts

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6 Author(s)
Cohen Elias, D. ; Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa ; Gavrilov, A. ; Cohen, S. ; Kraus, S.
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An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45- mum-wide T-shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1- mum emitters. The device exhibited typical dc and microwave performance to 0.5- mum emitter devices.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 9 )