By Topic

Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Nayfeh, O.M. ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA ; Chleirigh, C.N. ; Hennessy, John ; Gomez, Leonardo
more authors

Heterojunction tunneling field-effect transistors (HTFETs) that use strained-silicon/strained-germanium type-II staggered band alignment for band-to-band tunneling (BBT) injection are simulated using a nonlocal quantum tunneling model. The tunneling model is first compared to measurements of gate- controlled BBT in previously fabricated strained SiGe diodes and is shown to produce good agreement with the measurements. The simulation of the gated diode structure is then extended to study HTFETs with an effective energy barrier of 0.25 eV at the strained-Si/strained-Ge heterointerface. As the band alignment, particularly the valence band offset, is critical to modeling HTFET operation, analysis of measured characteristics of MOS capacitors fabricated in strained-Si/strained-Ge/relaxed Si0.5Ge0.5 hetero- junctions is used to extract a valence band offset of 0.64 eV at the strained-Si/strained-Ge heterointerface. Simulations are used to compare HTFETs to MOSFETs with similar technology parameters. The simulations show that HTFETs have potential for low-operating-voltage (Vdd < 0.5 V) application and exhibit steep subthreshold swing over many decades while maintaining high ON-state currents.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 9 )