Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Using Piezoresistance Model With C R Conversion for Modeling of Strain-Induced Mobility

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tsang, Y.L. ; Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., Newcastle upon Tyne ; O'Neill, A.G. ; Gallacher, B.J. ; Olsen, S.H.

The piezoresistance model has commonly been used to describe mobility enhancement for low levels of process induced strain in CMOS technology. However, many reports show it failing to describe the superlinear behavior observed at high levels of stress. This is because the approximation made is only valid for very low stress levels. In this letter, a conversion between the change in conductivity and resistivity is developed such that a piezoresistance model can be applied correctly to calculate the strain-induced mobility changes. Hence, the overall accuracy is improved compared to the conventional formulation. Its significance is confirmed with the results from Monte Carlo simulations of mobility, nMOSFETs, pMOSFETs, and nanowires.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 9 )