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On the Impact of Defects Close to the Gate Electrode on the Low-Frequency \hbox {1}/f Noise

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6 Author(s)
Magnone, P. ; Dipt. di Elettron. Inf. e Sist., Calabria Univ., Cosenza ; Pantisano, L. ; Crupi, F. ; Trojman, L.
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This letter studies the impact of defects close to the gate electrode side on low-frequency 1/f noise in the drain and gate current. Defects are selectively introduced by deposition of a submonolayer of HfO2 dielectric, which induce a large Fermi-level pinning on the gate. Contrary to the common belief that defects at the Si/SiO2 interface are the dominant effect on 1/f noise, defects at the interface and fluctuations in the poly-Si charge are also important.

Published in:

Electron Device Letters, IEEE  (Volume:29 ,  Issue: 9 )