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High-performance sub-60 nm Si/SiGe (Ge:~75%)/Si heterostructure quantum well pMOSFETs with a conventional MOSFET process flow, including gate-first high-kappa/metal gate stacks with ~1 nm equivalent oxide thickness, are demonstrated. For the first time, short gate length (L g) devices demonstrate not only controlled short channel effects, but also an excellent on-off current (I on/I off) ratio (~5times104 55-nm L g). The intrinsic gate delay of these heterostructures is ~3 ps at I on/I off~104. OFF-state leakage was minimized by controlling the defects in the epitaxial films. Finally, these short L g devices, when benchmarked against state-of-the-art Si channel pMOSFETs, appear to be very promising in replacing the Si channel in CMOS scaling.