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Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix

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4 Author(s)
Lv, X.Q. ; Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing ; Liu, N. ; Jin, P. ; Wang, Z.G.

Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as the active region. The ultrawide emitting spectrum of 142 nm was achieved. The short migration length of indium adatoms on AlGaAs surface increases the size dispersion of InAs QDs, resulting in the broadening of optical gain spectrum.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 20 )

Date of Publication:

Oct.15, 2008

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