By Topic

High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220–1240-nm Wavelength Range

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Bisping, D. ; Wurzburg Technische Phys., Wurzburg ; Pucicki, D. ; Hofling, S. ; Habermann, S.
more authors

We report on the high-temperature performance of high-power GalnNAs broad area laser diodes with different waveguide designs emitting in the 1220-1240-nm wavelength range. Large optical cavity laser structures enable a maximum continuous-wave output power of >8.9 W at T = 20degC with emission at 1220 nm and are characterized by low internal losses of 0.5 cm-1 compared to 2.9 cm-1 for the conventional waveguide structures. High-power operation up to temperatures of 120deg C is observed with output powers of >4 W at T = 90degC. This laser diode showed characteristic temperatures of To = 112 K and T1 = 378 K.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 21 )