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CMOS RF Design for Reliability Using Adaptive Gate–Source Biasing

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2 Author(s)
Jiann-Shiun Yuan ; Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL ; Tang, H.

An adaptive gate-source biasing scheme to improve the MOSFET RF circuit reliability is presented. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in the drain current subjected to various device reliability mechanisms. The MOS DC circuit using the adaptive technique is less sensitive to a threshold voltage and mobility degradations from a long-term stress effect. A class-AB RF power amplifier example shows that the use of a source resistance makes the power-added efficiency robust against the threshold voltage and mobility variations, whereas the use of a source inductance is more reliable for the input third-order intercept point.

Published in:

Electron Devices, IEEE Transactions on  (Volume:55 ,  Issue: 9 )

Date of Publication:

Sept. 2008

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