By Topic

A Dual Workfunction Gate for Thin-Gate-Insulator Schottky-Barrier MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chun-Hsing Shih ; Dept. of Electr. Eng., Yuan Ze Univ., Taoyuan ; Sheng-Pin Yeh

A dual workfunction gate (DWG) is proposed for the thin-gate-insulator Schottky-barrier MOSFETs (SBMOS) to adjust the barrier distributions by self-aligned tilt-angle implantation. Effects of DWG on SBMOS are investigated using 2-D simulations. Against junction engineering by dopant segregation, as the gate insulator scaled, the stronger gate coupling from DWG can both improve the on-state barrier lowering for electron and enhance the off-state barrier widening for hole. By using DWG architecture, SBMOS can be successfully scaled with thinner gate insulator as the promising candidate for next-generation CMOS devices.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 9 )