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Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon (\hbox {Si}_{1 - y}\hbox {C}_{y}) Source and Drain Stressors With High Carbon Content

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13 Author(s)
Tsung-Yang Liow ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Kian-Ming Tan ; Doran Weeks ; Rinus Tek Po Lee
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Phosphorus in situ doped (Si1-yCy) films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate -oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel. In situ doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced enhancement of 15% and 22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively.

Published in:

IEEE Transactions on Electron Devices  (Volume:55 ,  Issue: 9 )