By Topic

4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Handin Liu ; Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA ; Mcintosh, D. ; Xiaogang Bai ; Huapu Pan
more authors

We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm, corresponding to more than a 50% increase in external quantum efficiency compared to nonrecessed structures. The dark current was 90 pA at a photocurrent gain of 1000. Avalanche gains of over 106, k ~ 0.1, and a spatially uniform response were achieved.

Published in:

Photonics Technology Letters, IEEE  (Volume:20 ,  Issue: 18 )