Cart (Loading....) | Create Account
Close category search window
 

A rigorous surface-potential-based I-V model for undoped cylindrical nanowire MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
15 Author(s)
Lin, S.H. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; Zhou, X. ; See, G.H. ; Zhu, Z.M.
more authors

A non-charge-sheet surface-potential-based compact drain-current model for long-channel undoped gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs is developed. The surface-potential equation is derived from cylindrical Poisson equation for undoped silicon and solved iteratively with a very good initial guess to reach equation residue below 10-16 V within a few iterations. The single-piece current equation is derived and validated with numerical simulations for all operation regions without any fitting parameters. The results show that the proposed model can be used for bench-marking long-channel SiNW models, and demonstrate a first step towards a practical SiNW model for inclusion of various short-channel and quantum-mechanical effects.

Published in:

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Date of Conference:

2-5 Aug. 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.