By Topic

Technology of SOI monolithic active pixel detectors for improvement of I-V characteristics and reliability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Niemiec, H. ; AGH University of Science and Technology, POLAND ; Kucewicz, W. ; Sapor, M. ; Grabiec, P.
more authors

Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Some important parameters of the devices are breakdown voltage and leakage current. The paper addresses recent developments in the field of the technology of the SOI detectors, which lead to improvement of reliability and current-voltage characteristics of the sensors.

Published in:

Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on

Date of Conference:

19-21 June 2008