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Development of multi-gate mosfet models for circuit simulation with a compact modeling platform

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9 Author(s)
Mattausch, H.J. ; Hiroshima University, JAPAN ; Chan, M. ; He, J. ; Koike, H.
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Research is reported that aims at a framework for efficient development of multi-gate MOSFET models for circuit simulation and is carried out in an international collaboration among different research teams. A common platform for compact-model development, based on the Verilog-A language, is also constructed to verify as well as to efficiently merge the individual contributions from each collaborator into the final completed compact model.

Published in:

Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th International Conference on

Date of Conference:

19-21 June 2008