By Topic

Effect of exposure energy, focus range, and surface reflection on the photolithography process of contact hole patterning

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
R. Sonboonton ; Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center (NECTEC), 51/4 Moo 1, Wangtakien District, Amphur Mueang, Chachoengsao 24000, Thailand ; E. Chaowicharat ; P. Meesapawong ; J. Ladthidej
more authors

The patterning the contact holes by photolithography process, in this case polysilicon contacts, is the process to produce electrical connection between metal layer and polysilicon gates or metal layer and source/drain. The photolithography process can control size and shape of the contact hole patterns on photoresist before permanently patterned by etching process and then metallization. The contact holes were specified to have the size of 0.8 micron after the photolithography process. In order to achieve this, the process parameters to be considered are exposure energy, focus length of the lens system, and the effect of light reflecting from the film topography underneath. Since in the previous processing step, the attempt to reduce the film topography was done by planarization using BPSG. By adjusting the exposure energy and focus, the optimal condition, to produce 0.8 micron contact holes, was found to be energy of 305 mJ/cm2 and focus of -1.0 mum.

Published in:

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on  (Volume:2 )

Date of Conference:

14-17 May 2008