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Parasitic Emission Suppression in Arrays of Individually Addressable Silicon Microcavity Plasma Devices

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4 Author(s)
Tchertchian, P.A. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL ; Spinka, T.M. ; Park, S.-J. ; Eden, J.G.

Full addressability of arrays of Si microcavity plasma devices has been demonstrated by adopting a split top electrode design. Arrays of pyramidal microcavities with emitting apertures of 100 times 100 mum2, a pixel pitch of 200 mum, and sizes as large as 512 times 512 pixels have been fabricated in 250-mum-thick Si(100) wafers. Parasitic capacitance is responsible for weak emission from adjacent microcavities when a single pixel is addressed but the suppression of nearest neighbor fluorescence with the current array design is ~6 dB. Any pixel in the array can be addressed with an rms voltage as low as 240 V when the array is operating in 500 torr of Ne.

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Plasma Science, IEEE Transactions on  (Volume:36 ,  Issue: 4 )