Referenced Items are not available for this document.
Space silicon solar cell technology has matured to the extent that large-area planar silicon cells can be fabricated in sizes up to 8 cm*8 cm with efficiencies up to approximately 15%. In order to achieve substantially higher efficiencies, cells based on GaAs are required. It is shown that, subject to certain boundary conditions, the efficiency of GaAs/Ge cells can reach 24% when used in the dual-junction configuration or approximately 19.5% if the Ge substrate is passive. The electrooptical properties of these cells are reviewed, and prospects for achieving these efficiency goals are presented. Experimental performance data are given.<
Published in:
Aerospace and Electronic Systems Magazine, IEEE
(Volume:5
,
Issue:
1
)
Date of Publication: Jan. 1990
- Page(s):
- 25 - 29
- ISSN :
- 0885-8985
- INSPEC Accession Number:
- 3631872
- Digital Object Identifier :
- 10.1109/62.45988
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan. 1990
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