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An optical model of a transmission-type vertical-cavity electro-absorption modulator (EA) on Si/SiO2 for highspeed intra/inter-chip interconnects is developed and analysed by the method of single expression (MSE). As an external radiation source a wideband light source is suggested for avoiding the problem of usage of Si emitter. Transmission properties of symmetrical structure of a modulator consisting of Si p-n junction embedded between Si/SiO2 DBRs are analysed versus the values of imaginary part of p-n junction permittivity. Corresponding distributions of electric field amplitude and power flow density along the structure and surrounding half-spaces are presented for high and low transmission state. The transparency of the structure permits to have a cascade of modulators which can be installed in special trunks on chips for connection between different layers of an integrated circuit.