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Silicon-on-insulator (SOI) LDMOS has been considered the promising technology for radio-frequency (RF) power FETs because of its merits of high power efficiency, low standby power, outclassing RF characteristics using high resistivity base substrate and so on [1-2]. However, it is very important to improve the current drivability and suppress the flicker noise in the MOSFETs to realize the high performance RF power devices . It has been reported that the hole mobility on Si(110) surface is much larger than that on Si(100)  and indicates the possibility for improving the CMOS performance. This experimental study reports the new approach to realize a very high performance RF power FETs on Si(110) surfaces using accumulation-mode (AM) SOI device structure with very large current drivability and very low noise level. We demonstrate that this high-speed and low-noise novel balanced CMOS device obviously improves the inverter, ring oscillator circuit performance.