A new approach to realize high performance RF power FETs on Si(110) surface

Silicon-on-insulator (SOI) LDMOS has been considered the promising technology for radio-frequency (RF) power FETs because of its merits of high power efficiency, low standby power, outclassing RF characteristics using high resistivity base substrate and so on [1-2]. However, it is very important to improve the current drivability and suppress the flicker noise in the MOSFETs to realize the high performance RF power devices [3]. It has been reported that the hole mobility on Si(110) surface is much larger than that on Si(100) [4] and indicates the possibility for improving the CMOS performance. This experimental study reports the new approach to realize a very high performance RF power FETs on Si(110) surfaces using accumulation-mode (AM) SOI device structure with very large current drivability and very low noise level. We demonstrate that this high-speed and low-noise novel balanced CMOS device obviously improves the inverter, ring oscillator circuit performance.