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A 210 GHz Dual-Gate FET Mixer MMIC With {>} 2 dB Conversion Gain, High LO-to-RF Isolation, and Low LO-Drive Requirements

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5 Author(s)
Kallfass, I. ; Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg ; Massler, H. ; Leuther, A. ; Tessmann, A.
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We demonstrate the first active mixer monolithic microwave integrated circuit (MMIC) with positive conversion gain beyond 200 GHz. The presented dual-gate topology is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. Without any pre- or post-amplification, the down-conversion mixer achieves > 2 dB conversion gain and > 16 dB local oscillation to radio frequency (LO-to-RF) isolation at 210 GHz, outperforming state-of-the-art resistive MMIC mixers. The conversion gain becomes positive for LO power levels larger than 0 dBm, making the mixer suitable for being driven by an MMIC-based frequency doubler. A comparison to state-of-the-art G-band mixers is given.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:18 ,  Issue: 8 )