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Scaling evaluation of BE-SONOS NAND flash beyond 20 nm

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18 Author(s)
Hang-Ting Lue ; Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu ; Tzu-Hsuan Hsu ; Lai, S.C. ; Hsiao, Y.H.
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We have successfully fabricated and characterized sub-30 nm and sub-20 nm BE-SONOS NAND flash. Good device characteristics are achieved through two innovative processes: (1) a low-energy tilt-angle STI pocket implantation to suppress the STI corner edge effect, and (2) a drain offset using an additional oxide liner to improve the short-channel effect. The conventional self-boosting program-inhibit and ISPP (incremental step pulse programming) for MLC storage are demonstrated for 20 nm BE-SONOS NAND operation. Read current stability and read disturb life time are also evaluated. The estimated number of storage electrons is only 50-100, and for the first time we have demonstrated successful data retention after 150degC baking in the ldquofew-electronrdquo regime. Our results strongly suggest that BE-SONOS is a promising charge-trapping (CT) technology for NAND Flash scaling.

Published in:

VLSI Technology, 2008 Symposium on

Date of Conference:

17-19 June 2008

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