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We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ) fabrication: flexibly-shaped-pulse flash lamp annealing (FSP-FLA). The conventional FLA treatment on metal/high-k device degrades its effective electron mobility (mueff) and bias temperature instability (BTI) characteristics. A recovery annealing (RA) treatment after FLA is most effective to recover those degradations. However, the annealing after dopant activation causes deactivation and diffusion. The FSP-FLA allowed us sub-10-milli-second annealing after activation FLA; it realizes high BTI reliability and high mueff without deactivation and diffusion.