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A proposal of new concept milli-second annealing: Flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for fabrication of ultra shallow junction with improvement of metal gate high-k CMOS performance

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5 Author(s)
Onizawa, T. ; Semicond. Leading Edge Technol., Tsukuba ; Shinich Kato ; Aoyama, T. ; Nara, Y.
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We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ) fabrication: flexibly-shaped-pulse flash lamp annealing (FSP-FLA). The conventional FLA treatment on metal/high-k device degrades its effective electron mobility (mueff) and bias temperature instability (BTI) characteristics. A recovery annealing (RA) treatment after FLA is most effective to recover those degradations. However, the annealing after dopant activation causes deactivation and diffusion. The FSP-FLA allowed us sub-10-milli-second annealing after activation FLA; it realizes high BTI reliability and high mueff without deactivation and diffusion.

Published in:

VLSI Technology, 2008 Symposium on

Date of Conference:

17-19 June 2008