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Impact of the different nature of interface defect states on the NBTI and 1/f noise of high-k / metal gate pMOSFETs between (100) and (110) crystal orientations

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5 Author(s)
Sato, M. ; Semicond. Leading Edge Technol., Inc. (Selete), Tsukuba ; Sugita, Y. ; Aoyama, T. ; Nara, Y.
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We have clarified the difference in NBTI and 1/f noise of high-k/metal gate pMOSFETs between (110) and (100) oriented surfaces. Although the initial interface state density on (110) is higher than that on (100), the NBTI is better on the (110) surface. That is due to the different interface defect nature of interface defect states on (110) surface compared to (100). This difference has a strong impact on 1/f noise.

Published in:
VLSI Technology, 2008 Symposium on

Date of Conference: 17-19 June 2008

Page(s):
64 - 65
E-ISBN :
978-1-4244-1803-9
Print ISBN:
978-1-4244-1802-2
INSPEC Accession Number:
10140359
Conference Location :
Honolulu, HI
Digital Object Identifier :
10.1109/VLSIT.2008.4588565
Product Type:
Conference Publications

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