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Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge

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11 Author(s)

A novel RFCV-technique is applied to directly quantify the short channel devices at high Vds, enabling parameter extraction like velocity saturation and critical field. This technique is applied to benchmark Si (110) and Si(100) as well as Ge devices. Similarities and crucial differences between short channel parameters in Si and Ge are discussed.

Published in:

VLSI Technology, 2008 Symposium on

Date of Conference:

17-19 June 2008