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We have investigated effects of the oxygen doping into TaCx on the effective work function (Phim,eff) in TaCx/SiO2/Si and TaCx/HfO2/Si gate stacks. It has been found for the first time that the threshold voltage (Vth) is tunable within 0.5~0.6V for HfO2 MOSFETs by adjusting the oxygen content within 0~12 at. % in TaCx. Furthermore, it has been shown that unknown oxygen content in TaCx gates is a possible origin of scattering among the Phim.eff data reported.