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Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts

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7 Author(s)
Jiang, Y. ; Inst. of Microelectron., Singapore ; Liow, T.Y. ; Singh, N. ; Tan, L.H.
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Parasitic S/D resistances in extremely scaled GAA nanowire devices can pathologically limit the device drive current performance. We demonstrate for the first time, that S/D extension dopant profile engineering together with successful integration of low resistivity metallic nanowire contacts greatly reduces parasitic resistances. This allows 8 nm gate length GAA nanowire devices in this work to attain record-high drive currents of 3740 muA/mum.

Published in:

VLSI Technology, 2008 Symposium on

Date of Conference:

17-19 June 2008