By Topic

Characterization and modeling of program/erase induced device degradation in 2T-FNFN-NOR flash memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

In this paper, we report the program/erase degradation mechanisms in two transistor (2T) Fowler-Nordheim (FN) tunneling operated flash memories, based on extensive experimental study of the degradation characteristics of such 2T-FNFN test memory arrays and reference transistor arrays from several generation process technologies. A quantitative model has been established describing the degradation characteristics under various stress conditions (i.e. degradation due to program/erase cycling at various voltages and temperatures). A software tool has been developed to estimate the reliability performance of various products under different use conditions. This model (and tool) can also be used to estimate the product reliability performance in future process generations.

Published in:

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Date of Conference:

7-11 July 2008