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Stress-induced degradation in strain-engineered nMOSFETs

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8 Author(s)
Maiti, T.K. ; Dept. of Electron.&ECE, Indian Inst. of Technol., Kharagpur ; Mahato, S.S. ; Bera, M.K. ; Sengupta, M.
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Effects of electrical stress on DC performance of strain-engineered nMOSFETs are investigated using simulation. The applicability of technology CAD (TCAD) for the prediction of MOSFET reliability is demonstrated.

Published in:

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Date of Conference:

7-11 July 2008