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Stress-induced degradation in strain-engineered nMOSFETs

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8 Author(s)
Maiti, T.K. ; Dept. of Electron.&ECE, Indian Inst. of Technol., Kharagpur ; Mahato, S.S. ; Bera, M.K. ; Sengupta, M.
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Effects of electrical stress on DC performance of strain-engineered nMOSFETs are investigated using simulation. The applicability of technology CAD (TCAD) for the prediction of MOSFET reliability is demonstrated.

Published in:
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Date of Conference: 7-11 July 2008

Page(s):
1 - 3
E-ISBN :
978-1-4244-2040-7
Print ISBN:
978-1-4244-2039-1
INSPEC Accession Number:
10140568
Conference Location :
Singapore
Digital Object Identifier :
10.1109/IPFA.2008.4588185
Product Type:
Conference Publications

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