By Topic

Stress-induced degradation in strain-engineered nMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
T. K. Maiti ; Dept. of Electronics & ECE, Indian Institute of Technology Kharagpur, 721302, India ; S. S. Mahato ; M. K. Bera ; M. Sengupta
more authors

Effects of electrical stress on DC performance of strain-engineered nMOSFETs are investigated using simulation. The applicability of technology CAD (TCAD) for the prediction of MOSFET reliability is demonstrated.

Published in:

2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Date of Conference:

7-11 July 2008