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Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs

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2 Author(s)
Zhang, W.-C. ; Inst. of Semicond., Chinese Acad. of Sci., Beijing ; Wu, N.-J.

A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.

Published in:

Electronics Letters  (Volume:44 ,  Issue: 16 )