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Silicon thermal oxidation models comparison used in TCAD Sentaurus process and fact

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1 Author(s)
Kuznetsov, D.O. ; Novosibirsk State Tech. Univ., Novosibirsk

The present paper deal with research and comparison of models of thermal oxidation of the silicon, used in TCAD Sentaurus Process and Fact. Data comparative analysis of modelling of typical industrial modes is done. Conclusion concerning models urgency and applicability is made.

Published in:

Electron Devices and Materials, 2008. EDM 2008. 9th International Workshop and Tutorials on

Date of Conference:

1-5 July 2008