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Fabrication of nano-structured VOx film by low temperature ion beam sputtering and reductive annealing

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9 Author(s)
Xiaodong Wang ; Inst. of Semicond., Chinese Acad. of Sci., Beijing ; Guike Li ; Jiran Liang ; An Ji
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VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400degC for 2 hours. The film also shows a polycrystal structure with grain size from 50 nm to 150 nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.

Published in:

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Date of Conference:

24-27 March 2008