Fabrication of nano-structured VOx film by low temperature ion beam sputtering and reductive annealing

VO
_x
thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400degC for 2 hours. The film also shows a polycrystal structure with grain size from 50 nm to 150 nm. The VO
_x
thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VO
_x
film with relatively high TCR and semiconductor-metal phase transition.