Referenced Items are not available for this document.
With development of deep sub-micro technology, process-induced variation has become much more important on IC design than other challenges for high yield. Qualitative analysis and quantitative analysis of the correlation between interconnect electrical parameters and physical parameters are shown by statistical method and curves fitting technology. It indicates that electrical parameters are more sensitive to metal width and thickness than others distinctly.
Published in:
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Date of Conference: 24-27 March 2008
- Page(s):
- 798 - 801
- E-ISBN :
- 978-1-4244-1573-1
- Print ISBN:
- 978-1-4244-1572-4
- INSPEC Accession Number:
- 10118424
- Conference Location :
- Shanghai
- Digital Object Identifier :
- 10.1109/INEC.2008.4585604
- Product Type:
- Conference Publications
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