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Analysis of interconnect sensitivity to process variation in 90nm

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3 Author(s)
Jiang Lifei ; Microelectron. CAD Center of Hangzhou, Dianzi Univ., Hangzhou ; Sun Lingling ; Zhou Lei

With development of deep sub-micro technology, process-induced variation has become much more important on IC design than other challenges for high yield. Qualitative analysis and quantitative analysis of the correlation between interconnect electrical parameters and physical parameters are shown by statistical method and curves fitting technology. It indicates that electrical parameters are more sensitive to metal width and thickness than others distinctly.

Published in:

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Date of Conference:

24-27 March 2008

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