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Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles

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4 Author(s)
Jiang Yanfeng ; Microelectronic Center, North China University of Teclulology , Beijing, 100041, China ; Yang Bing ; Zhang Xiaobo ; Ju Jiaxin

It has been proved by experimental results that the ohmic contact property of silicon carbide can be improved by using some specific nanometer metal particles. In this paper, authors have constructed a quantum tunneling models to explain the experimental results. The influences of parameters on the ohmic contact characteristics have been calculated based on the models. The values show that the tunneling effect can be observed by adding nanometer particles. The tunneling probability has been increased. Moreover, with the existence of nanometer particles, pinning of Fermi level has been conquered. So, it is an effective method by using specific nanometer metal particles to improve the characteristic of P-type silicon carbide ohmic contact.

Published in:

2008 2nd IEEE International Nanoelectronics Conference

Date of Conference:

24-27 March 2008