Quantitative analysis of Si/Ge quantum structures by high-resolution transmission electron microscopy

Quantitative high-resolution transmission electron microscopy was used to examine structural peculiarities of SiGe quantum islands on an atomic scale. A combination of high-resolution transmission electron microscopy and geometric phase analysis was applied to study the deformation fields of SiGe quantum islands grown on a Si(001) substrate by an ultrahigh vacuum chemical vapor deposition system. The numerical moire method was applied to visualize the lattice fringe surrounding the interface defects.