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Quantitative analysis of Si/Ge quantum structures by high-resolution transmission electron microscopy

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4 Author(s)
Zhao, C.W. ; Coll. of Sci., Inner Mongolia Univ. of Technol., Hohhot ; Xing, Y.M. ; Yu, J.Z. ; Han, G.Q.

Quantitative high-resolution transmission electron microscopy was used to examine structural peculiarities of SiGe quantum islands on an atomic scale. A combination of high-resolution transmission electron microscopy and geometric phase analysis was applied to study the deformation fields of SiGe quantum islands grown on a Si(001) substrate by an ultrahigh vacuum chemical vapor deposition system. The numerical moire method was applied to visualize the lattice fringe surrounding the interface defects.

Published in:

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Date of Conference:

24-27 March 2008

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